Double-sided Si strip sensors for LEP vertex detectors

Drift Chamber Vertex Detectors for Slc/lep*

Development of Double-Sided Microstructured Si(Li) Detectors

A new technique for manufacturing double-sided structured Si(Li) detectors has been established. The position-sensitive structure on the implanted p–contact can be made smaller than 100 m by photolithography followed by plasma etching of grooves to separate the position elements. By modifying this technique position-sensitive structures on a thin ( 30 m) Li-diffused contact were created. Areas ...

New Contact Development for Si(Li) Orthogonal-Strip Detectors

At present, the contacts generally used for lithium-drifted silicon detectors consist of a diffused lithium layer (n-type) and a gold surface barrier (p-type). These contacts work well for unsegmented detectors. However, they both have disadvantages if used for segmented detectors. For this reason, we are developing new types of contacts that will be more robust and easier to segment. To replac...

A "Bioscope" system using double-sided silicon strip detectors and self-triggering read-out chips

The components and the design of a 640 by 640 channel radiation detection system based on double-sided silicon strip detectors and self-triggering read-out chips are presented. The system has been designed for applications in autoradiography and X-ray imaging in medicine, biology and other fields. Images and results from first tests of the system are shown.

CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors

This paper reviews the development of CMOS Monolithic Active Pixel Sensors (MAPS) for future vertex detectors. MAPS are developed in a standard CMOS technology. In the imaging field, where the technology found its first applications, they are also known as CMOS Image Sensors. The use of MAPS as a detector for particle physics was first proposed at the end of 1999. Since then, their good perform...